Minority carrier lifetime in plasma-textured silicon wafers for solar cells
نویسندگان
چکیده
In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 ms for both RIEand HDP-textured wafers at an excess carrier density of 1 10 cm . The measured lifetimes correspond to an implied one-sun open-circuit voltage of around 680mV compared to about 640mV before DRE for the HDP-textured wafers. FZ silicon /1 0 0S wafers were used in this study. We also noted that in the RIE process, the induced defect density was significantly lower for wafers etched at 300K than those etched at 173K. r 2004 Elsevier B.V. All rights reserved.
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